jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 4 - http://www.jjwdz.com j x 0 11 series sensitive gate scrs rev. 4 .0 description: the jx011 scr series provide high dv/dt rate with strong resistance to electromagnetic interface. they are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. main features symbol value unit i t( rms ) 1 a i gt 200 a v tm 1. 7 v absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 1 10 repetitive peak off - state voltage v drm 800 v repetitive peak reverse voltage v rrm 800 v rms on - state current to - 92 (t c =50 ) i t(rms) 1 a sot - 223 ( t c = 7 5 ) non repetitive surge peak on - state current (tp=10ms) i tsm 12 a i 2 t value for fusing (tp=10ms) i 2 t 0.72 a 2 s critical rate of rise of on - state current di/dt 50 a / s peak gate current (tp=20 s , tj=110 ) i gm 0.3 a peak gate power (tp=20 s , tj=110 ) p gm 0.5 w average gate power dissipation(t j = 110 ) p g(av) 0. 1 w to-92 a(2) k(1) g(3) sot-223 2 1 3 1 3 2
j x0 11 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 4 - http://www.jjwdz.com electrical characteristics ( t j =25 unless otherwise specified ) symbol test condition value unit min. typ. max. i gt v d =12v r l = 3 3 - - 200 a v gt - 0. 6 0.8 v v gd v d =v drm t j =1 10 0.2 - - v i l i g = 1.2 i g t - - 5 ma i h i t = 0.05 a - - 3 ma dv/dt v d = 2/3 v drm t j =1 10 r gk =1k 50 100 - v / s static characteristics symbol parameter value(max) unit v tm i t = 2 a tp=380 s t j =25 1. 7 v i drm v d =v d rm v r =v r rm t j =25 5 a i rrm t j =1 10 1 0 0 a thermal resistances symbol parameter value unit r th(j - c) junction to case to - 92 70 /w sot - 223 60 ordering information j x 0 1 1 u j i e j i e m i c r o e l e c t r o n i c s c o . , l t d s e n s i t i v e g a t e s c r s i t ( r m s ) : 1 a u : t o - 9 2 v : s o t - 2 2 3
j x0 11 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 4 - http://www.jjwdz.com package mechanical data k g b max 1.5mm h a f c n n e p v d j dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c d e f g h j k n p v 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.60 0.80 1.1 0.043 - 1.27 - 0.050 - - - 2.30 - 0.091 - - 0.36 0.50 0.014 0.020 15.0 12.70 0.500 0.591 2.04 2.66 0.080 0.105 1.86 2.06 0.073 0.081 4.3 0.169 - - 0.024 0.031 - - - - to-92 fig.1 maximum power dissipation versus rms on-state current fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 0.2 0.4 0.6 0.8 1.0 0 0.5 i t(rms) (a) tc ( ) 0 0.5 1.0 0 25 50 75 100 125 1.5 1.0 1.5 to-92 sot-223 =180
j x0 11 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 4 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is si gned, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the f o u r t h versi on which is made in 2 0 - dec . - 2014. this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copy right ? 201 4 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.3: surge peak on-state current versus number of cycles fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms (di/dt 50a / s) fig.4: on-state characteristics (maximum values) 1 10 100 1000 number of cycles 0 i tsm (a) i tm (a) 0 1.0 2.0 3.0 4.0 5.0 tp(ms) 0.01 0.1 1 10 1 10 100 i tsm (a) -40 0 40 80 120 i gt ,i h ,i l (tj)/i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 3 6 9 12 tj ( ) i gt i h &i l 10 v tm (v) tj=25 tj=tjmax i tsm one cycle tp=10ms di/dt
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